AgGaSe2 (Silver Gallium Selenide) – Laser Crystal – Nonlinear Crystal – Customized Products

Product ID: 6681


$100

AgGaSe2 (Silver Gallium Selenide) – Laser Crystal – Nonlinear Crystal – Customized Products

AgGaSe2 (Silver Gallium Selenide Crystal), referred to as AGSe crystal, is a group I-III-Ⅵ2 ternary compound semiconductor with chalcopyrite structure and 4-2 m point group. It is an excellent mid- and far-infrared nonlinear optical material, which can transmit infrared light from 0.73 to 21 μm, with a large nonlinear coefficient (d36=43×10-12 m/V), suitable birefringence, phase matching for the second harmonic in the range of 3 to 18 μm, and is an effective crystal material for mid-infrared laser frequency doubling, and also has excellent properties of three-wave nonlinear interaction (OPO) It is an effective crystal material for mid-infrared laser multiplication and has excellent properties for three-wave nonlinear interaction (OPO). The available waveband is 0.9-16 μm. 2.5-12 μm OPO tuned light source is obtained by pumping AgGaSe2 crystal with Ho:YLF 2.05 μm; 1.9-5.5 μm tuned light source is output by non-critical phase matching OPO pumped with 1.4-1.55 μm tuned light source.

Note:
$100 is a deposit, not the final price of the product. Please contact us for price if needed.

FEATURES
Large transmission range: from 0.73 to 18 μm
Low optical absorption and low scattering
Application wavelengths up to 17 μm in the mid-IR
High FOM (quality factor) for nonlinear interactions in NIR and MIR
High frequency doubling efficiency for mid-infrared lasers
Tunable OPO for solid-state lasers with efficiencies up to 10% optical narrow-band filtering in the region around each homogeneity point

Physicochemical Properties

Chemical Formula AgGaSe2
Crystal Structure Tetragonal
Lattice Constant a=5.9920Å,c=10.8803Å
Optical Symmetry Uniaxial Negative (no>ne,λ<804 nm ne>no)
Density 5.7g/cm3
Mohs Hardness 3-3.5
Transparency range 0.71-19μm
Sellmeier Equation @T=293 K(λ in μm) no2=6.8507+0.4297/(λ2-0.1584)-0.00125λ2;
ne2=6.6792+0.4598/(λ2-0.2122)-0.00126λ2
Refractive Index @10.5μm no=2.5917,ne= 2.5585
Thermal Conductivity @T=293 K 1 (||c) Wm-1K-1, 1,1 (⊥c) Wm-1K-1
Damage Threshold >10MW/cm2@10.6μm,150 ns
Melting Point 851℃
Band Gap 1.83eV
Clock Multiplier Factor 33pm/V
Birefringence 0.0246@1.06μm
0.0317@5.3μm
0.0332@10.6μm

 

Processing Parameters

Orientation Accuracy <±0.1°
Surface Finish 30/20 per MIL-O-13830A
Face Shape λ/8@632.8nm for T>=1mm
Clear Surface Tolerance +0/-0.1mm
Length Tolerance ±0.1mm
Parallelism 30″
Perpendicularity 10′
Bevel <0.2mm×45°

 

Spectrum

TaorLab laser crystals

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