LiNbO3&MgO:LiNbO3 Pockels Cells – Electro-optic Product- Customized Products

Product ID: 6777


$100

LiNbO3&MgO:LiNbO3 Pockels Cells – Electro-optic Product- Customized Products

LN (LiNbO3) Pockels Cells, also known as lithium niobate pockets cells, is a comprehensive and excellent pockels cells. The device is widely used in the fields of optical communication and optical waveguide technology. The product has the advantages of high electro-optical coefficient, non-hygroscopicity, a wide range of transparency, and good mechanical and physical properties, which can be applied in the fields of electro-optical modulators, modulation of laser beams outside the wave voltage of resonators. Lithium niobate crystals are one of the most commonly used materials for Q-switches and phase modulators due to their high electro-optical coefficient, non-hygroscopicity, good transmission up to 4.0 μm, and transverse mode operation. LiNbO3 pockels cells can be configured to operate at lower voltages than KD*P cells by applying an electric field laterally in the direction of light propagation. LiNbO3 pockels cells can support IR wavelength operation up to 4.0 μm and are also a good choice for low to medium power solid-state laser (Er: YAG, Ho: YAG, Tm: YAG pulsed lasers) applications. Also, LiNbO3 with MgO doping has a significantly higher damage threshold compared to conventional undoped LiNbO3.

Note:
$100 is a deposit, not the final price of the product. Please contact us for price if needed.

FEATURES
Low loss
High electro-optical coefficient
Wide range of transparency
Low wavefront distortion
High temperature stability
Stable mechanical and chemical properties

Pockels Cell Specifications

Clear Aperture Min:5×5mm,Max:20×20mm
Length ~60mm
Flatness <λ/8 @633nm
Wavefront Distortion <λ/4 @633nm
Parallelism <20“
Perpendicularity <5”
Surface Finish 20/10
Wavelength Band 300-3000nm


Pockels Cell Product Parameters

Clear Aperture 2.5mm 5mm 8mm 9mm
Shell Size φ20×66mm φ25.4×36mm φ30/32×26/30mm φ31/32×26mm
λ/4 Voltage 400V λ/2 @633nm 800V λ/2 @633nm 1800V-1900V λ/4 @1064nm 2100V λ/4 @1064nm
Transmittance >98% >98% >98% >98%
Insertion Loss 0.03 0.03 0.03 0.03
Flatness <λ/8 @633nm <λ/8 @633nm <λ/8 @633nm <λ/8 @633nm
Extinction Ratio(5mm) 200:1 200:1 200:1 200:1
Capacitance 5pF 5pF 5pF 5pF
Damage Threshold 100MW/cm2 @1064nm 10ns 10Hz(LN)
300MW/cm2 @1064nm 10ns 10Hz(MgO:LN)

 

Structure Diagram

TaorLab laser crystals