BBO Pockels Cells – Electro-optic Product- Customized Products
BBO pockels cells (BaB2O4), also known as barium borate pockels cells. They are a pockels cells device with superior overall performance. They feature high damage threshold, low insertion loss, high extinction ratio, minimal piezoelectric ringing and competitive price.
Furthermore, they exhibit significant advantages in laser power handling capability, and temperature stability, and are largely unaffected by piezoelectric ringing.
BBO pockels cells have significant advantages in the following areas:
High repetition rate Q-switches
Pulse pickup up to 3 MHz
Laser cavity dumping
Egenerative amplifier control, and beam choppers
BBO pockels cells are a better choice than the KDP pockels cells in a high repetition rate and high power applications. They have low voltage electrical coupling factor of the BBO. They can generate pulses with a repetition frequency of several hundred kilohertz.
Features of BBO pockels cells:
Low absorption and noise
High UV transmittance
High repeatability and damage resistance
Pockels Cells with double crystal design available
Pockels Cell Specifications
Clear Aperture | To be confirmed |
Transmittance | >98% |
Damage Threshold | 500MW/cm2@10ns 1064nm |
Wavefront Distortion | <λ/8 @1064nm |
Typical Capacitance | <3pF |
Shell Size | φ25.4×44mm |
Quarter-wave Voltage | 3.4kv |
BBO Physical Properties
Crystal Structure | Trigonal,space group R3c,point group 3m |
Lattice Constant | a=b=12.532Å,c=12.717Å,Z=6 |
Melting Point | 1095±5℃ |
Phase Transformation Point | 925±5℃ |
Optical Homogeneity | δn~10-6cm |
Mohs Hardness | 4 |
Density | 3.85g/cm3 |
Hygroscopicity | Low |
Thermal Coefficient of Expansion | a:4×10-6K,c:36×10-6K |
Thermal Conductivity | ⊥C:1.2W/m/k , ∥C:1.6W/m/K |
Absorption Coefficient | <0.1%/cm @1064nm |
BBO Optical Properties
Transparency Range | 189-3500nm |
Refractive Index | 1064nm no=1.6545,ne=1.5392 |
800nm no=1.6606,ne=1.5444 | |
532nm no=1.6742,ne=1.5547 | |
400nm no=1.6930,ne=1.5679 | |
Thermo-optical Coeffecient | dno/dT=-9.3×10-6/℃ |
dne/dT=-16.6×10-6/℃ | |
Electro-optic Coefficient | γ11=2.7pm/V,γ22,γ31<0.1γ11 |
Half-wave Voltage | 48KV @1064nm |
NLO Coefficient | d11=5.8×d36(KDP) |
d31=0.05×d11 | |
d22<0.05×d11 | |
Phase Matching SH Wavelength | 189-3500nm |