Nd:YVO4 (Nd-doped yttrium vanadate) – Laser Crystal – Customized products
Nd: YVO4 crystal product, also known as neodymium doped gadolinium vanadate crystal, is a laser crystal product with excellent comprehensive performance for making semiconductor pumped solid-state lasers. Nd: YVO4 crystal is widely used in many fields, such as machinery, material processing, spectroscopy, wafer testing, display, medical testing, laser printing, data storage, etc. The product has the characteristics of good thermal conductivity, large stimulated emission cross section, high laser damage threshold, absorption bandwidth and absorption peak of about 808nm. Because of these advantages, small crystals can be used to make smaller laser devices. Another feature of Nd: YVO4 crystal is that it is uniaxial, which makes it emit linearly polarized light. Combined with frequency doubling crystal, all solid-state lasers with green, blue and red wavelengths can be realized. Now, Nd: YVO4 laser has been widely used in many fields, such as machinery, material processing, spectroscopy, chip inspection, display, medical testing, laser printing, data storage and so on. And Nd: YVO4 diode-pumped solid-state lasers are rapidly replacing traditional water-cooled ion lasers and lamp-pumped lasers in the market, especially in miniaturization and single longitudinal analog output. It can be used in laser diode pumped all solid state (DPSS) micro lasers, lidar and remote sensing satellite products.
Note:
$100 is a deposit, not the final price of the product. Please contact us for price if needed.
Features:
Uniaxial crystal
Absorb the bandwidth
High damage threshold
High absorption coefficient
High absorption coefficient
Stimulated radiation cross section
Good physical and optical properties
Material Specifications
Material | Nd: YVO4 |
The Concentration of Tolerance(atm%) | 0.5%, 1.1%, 2.0%, 3.0% |
Orientation | A-cut or C-cut |
Parallelism | 20〞 |
Vertical | 5〞 |
Surface Finish | 10/5 scratches/depressions consistent with MIL-O-13830 B |
Wavefront Distortion | <λ/8 @633nm |
Surface Flatness | λ/10@ 633 nm |
Clear Aperture | >90% |
Chamfer | ≤0.2mm@450 |
Size Tolerance | (W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm) (L<2.5mm) |
(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm) | |
Angle Tolerance | ≤0.5° |
Damage Threshold[GW / cm2] | >1 for 1064nm, TEM00, 10ns, 10Hz (AR-coating) |
Coating | HR@1064nm+532nm+HT@808nm/AR@1064nm+532nm |
Physical and Chemical Properties
Crystal Structure | Zircon Quadriboid, Space GroupD4h-I4 / amd |
Lattice Constant | a=b=7.12, c=6.29 |
Density | 4.22g/cm3 |
Melting Point | 1825 |
Thermal Conductivity/(W·m-1·K-1 @ 25°C) | 5.2 |
Thermal-optical Coefficient | dno/dT=8.5×10-6/K; dne/dT=2.9×10-6/K |
Thermal Expansion Rate/(10-6·K-1 @ 25°C) | a = 4.43, c= 11.4 |
Mohs Hardness | 4~5 |
Optical and Spectral Properties
Laser Wavelength | 1064nm, 1342nm |
Polarized Laser Emission | π polarization; Parallel to the optical axis (c axis) |
Pump Wavelength | 808nm |
Intrinsic Loss | 0.02cm-1@1064nm |
Diode Pumps Light to Light Efficiency | >60% |
Emission Cross Section | 25×10-19cm2@1064nm |
Fluorescence Lifetime | 90 μs (About 50 μs for 2 atm % Nd doping) @ 808 nm |
Gain Bandwidth | 0.96nm @1064nm |
Refractive Index | 1.9573(no); 2.1652(ne) @1064nm |
1.9721(no); 2.1858(ne) @808nm | |
2.0210(no); 2.2560(ne) @532nm | |
Absorption Coefficient | 31.4 cm-1 @ 808 nm |
Absorption Length | 0.32 mm @ 808 nm |
Gain Bandwidth | 0.96 nm (257 GHz) @ 1064 nm |