- Solid State Laser
- Semiconductor Laser
- DPSS laser
- Gas Laser
- Fiber Laser
- Fiber Coupled Laser(MM)
- Fiber Coupled Laser(SM)
- Ultrafast laser
- Femtosecond Laser
- Picosecond Laser
- Pulsed Laser
- Q-switched Laser
- Raman Laser
- Narrow Linewidth Fiber Laser
- Wavelength Tunable Laser
- Laser Diode
- Laser Module
- Pigtailed Laser
- DFB Laser
- DBR Laser
- SLED Laser
- VCSEL Laser
Yb:GGG
Yb:GGG(Yb doped gadolinium gallium garnet) – Laser Crystal – Gain Medium – Customized Products
Product ID: 6604
$100
Yb:GGG(Yb doped gadolinium gallium garnet) – Laser Crystal – Gain Medium – Customized Products
Yb: GGG crystal product, also known as Ytterbium-doped Gadolinium gallium garnet (Yb: Gd3Ga5O12). It is a kind of laser crystal product with excellent comprehensive performance. It is widely used in high power laser, semiconductor laser, LD pump fields. The product has the characteristics of high doping concentration, wide absorption band and low quantum defect. It can be used in ultra-short pulse laser, high power and high efficiency solid laser, ultra-short pulse laser, semiconductor laser products.
Yb: GGG crystal —— Laser Crystal for high-power solid-state lasers
Among rare earth element ions, Yb3 has a simple energy level structure, with an electronic configuration of [Xe]4f13 and only two electronic states, namely the ground state 2F7/2 and the excited state 2F5/2. Compared with Nd3+, this simple electronic structure has many advantages, such as low quantum defects, wide absorption band can be effectively coupled with the InGaAs diode pump source, there is no absorption of excited state and up-conversion process, etc. Therefore, Yb : GGG crystal can be used as the working material of high-power solid-state lasers.
Note:
$100 is a deposit, not the final price of the product. Please contact us for price if needed.
Features
Low quantum defects
Wide absorption band
High doping concentration
No excitation state absorption
Product Parameters
| Chemical formula | Yb:Gd3Ga5O12 |
| Crystal structure | Cubic, Ia3d |
| Lattice parameters | 12.38 Å |
| Zero-phonon line (ZPL) | 971nm |
| σabs (ZPL) | 6.6×10-25 cm2 |
| Broadband absorption | 930 nm – 950 nm |
| Peak emission wavelength(EW) | 1021nm |
| σem (EW) | 1.9×10-24 cm2 |
| Δλemission (FWHM at inversion ~10%) | 8nm |
| Quantum defects | 0.8 |
| Thermal conductivity, κ (5 at.%) | 7.8 W/m/K |
| κ (15 at.%) | 7.7 W/m/K |
| Coefficient of thermal expansion | 8×10-6·K-1 |
| dn/dT | 21.2×10sup>-6K-1 |
| αT | 8.5×10sup>-6K-1 |
| Mohs hardness | 7.5 |
| Melting point | 1750℃ |
Spectrum
