Yb:YAP – Laser Crystal – Gain Medium – Customized Products
Yb:YAP Chemical formula is Yb:YAlO3,Yttrium orthoaluminate activated with Yb3+ ions doped. It is mostly used in diode pumped high-power ultrafast lasers and the emission spectrum is around 1 um, also it’s scintillators. Yb:YAP is a Infra-red laser crystal, as a result of high threshold of pump, Yb:YAP has a widly used in application. In the continuous-wave state, the upper output power could be generated using the b-cut and c-cut Yb:YAP, and the output power of a-cut is lower. Due to the broad emission bandwidth and high thermal conductivity, Yb:YAP crystal is a gread laser for high power laser operation in CW and plsed regimes.
Yb:YAP crystal–diode pumped high-power ultrafast lasers
Yb:YAP crystal is a potentially useful polarized laser gain medium in laser-diode-pumped solid-state configurations. Yb:YAP crystals is used in large avalanche photodiodes, as the best photosensors are appearanced to be hopeful for future applications in neutrino physics.
Note:
$100 is a deposit, not the final price of the product. Please contact us for price if needed.
Features
Infrared
Low quantum defects
High thermal conductivity
Dual-axis orthogonal crystals
High-power continuous wave
The emission spectrum is approximately 1 μm
The high-absorption meson cross-section depends on the orientation of the crystal
Material and Specifications
Orientation | a-cut |
Transparent Aperture | >90% |
Face Dimension Tolerance | +0/-0.1mm |
Length Tolerance | ±0.1mm |
Parallelism Error | <10 arcsec |
Squareness Error | <10 arcmin |
Protective Groove | <0,1 mm @45˚ |
Surface Quality | 10-5 S-D |
Surface Roughness | <λ/10@6328 nm |
Coating | Ar(R<0.25%) @978 nm+<ar(r<0.15%) @1020-1070=”” nm<=”” td=””> </ar(r<0.15%)> |
Laser Damage Threshold | >10 J/cm2@1030 nm,10 ns |
Technical Characteristics
Absorption Peak Wavelength | 978 nm |
Peak Absorption Cross Section | 6.6×10-20cm2 |
Peak Absorption Bandwidth | 4nm |
Laser Wavelength | 1040 nm |
2F5/2Energy Level Lifetime | 500 μs |
Emission Cross Section@1040 nm | 0.5×10-20cm2 |
Refractive Index@632.8 nm | 1.96(∥a),1.94(∥b),1.97(∥c) |
Crystal Structure | Orthogonality |
Density | 5.35g/cm3 |
Mohs Hardness | 8.5 |
Thermal Conductivity | 11.7 (∥a), 10.0 (∥b), 13.3 (∥c) W/mK |
dn/dT | 7.7×10-6 (∥a) K-1, 11.7×10-6 (∥b) K-1, 8.3×10-6 (∥c) K-1 |
Thermal Expansion Coefficient | 2.32×10-6 (∥a) K-1, 8.08×10-6 (∥b) K-1 8.7×10-6 (∥c) K-1 |
Typical Doping Level | <2 at.% |